On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate
- 28 May 2020
- journal article
- research article
- Published by IOP Publishing in Applied Physics Express
- Vol. 13 (6), 065508
- https://doi.org/10.35848/1882-0786/ab92ee
Abstract
Vertically ordered hexagonal boron nitride (h-BN) films were successfully sputtered on AlGaN/GaN heterostructure (HS) using High Power Impulse Magnetron Sputtering at room temperature. The h-BNs vertical ordering along the (0002) plane was confirmed using high-resolution transmission electron microscopy. After the h-BN deposition, degradation of two-dimensional electron gas (2DEG) properties was observed in AlGaN/GaN HS. Full recovery of 2DEG mobility, along with an improvement in sheet resistance and an increase in sheet carrier concentration was obtained after rapid thermal annealing at 500°C for 300s in a N2 atmosphere, which is due to the reduction of sputtering related structural damage.Keywords
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