Resonant low-energy electron attachment to O2 impurities in dense neon gas

Abstract

We report measurements of resonant low-energy electron attachment to O₂ molecular impurities in neon gas in the temperature range 46.5 K < T A /N shows a well defined peak as a function of the gas density N when the electron energy is resonant with the 4th vibrational level of O₂ ^-. For 46.5 K < T T and N. The peak shape is rationalized by taking into account the density dependent shift of the electron energy distribution function and the density of states of excess electrons in a disordered medium, and by assuming that electrons sample the gas density over a region of the order of the ionic bubble radius.