Observation of domain wall creation and propagation using the magnetic fixed region with a synthetic antiferromagnetic configuration

Abstract

Spin-memristors using a magnetic domain wall (DW) have drawn attention as possible candidates for an essential element of the analogue neuromorphic device. In this study, we fabricated a DW type three-terminal magnetic tunneling junction element with a magnetic fixed region having a synthetic antiferromagnetic configuration. The DW creation and subsequent measurement of current-induced domain wall motion were investigated. The magnetic DW was successfully introduced through a simple operation using the magnetic fixed region as a DW injector. This element structure will be one of the key technologies for realizing an array level production of the spin-memristor.