Quantitative surface characterization of silicon spheres by combined XRF and XPS analysis for the determination of the Avogadro constant
- 17 May 2017
- journal article
- research article
- Published by IOP Publishing in Metrologia
- Vol. 54 (5), 653-662
- https://doi.org/10.1088/1681-7575/aa73c5
Abstract
For the quantitative surface characterization of a monocrystalline silicon sphere, PTB has constructed and put into operation an analytical instrument, which combines X-ray fluorescence and X-ray photoelectron spectroscopy techniques. The main objective of this novel instrument is the characterization of the oxide layer and unintentional contaminations, e.g. from hydrocarbons. It is 7uipped with a ball manipulator allowing measurements at each point on the surface of ball-shaped samples with a diameter of about 93.6 mm. Monocrystalline silicon spheres with this diameter allow a realization of the SI base unit of mass.Keywords
This publication has 20 references indexed in Scilit:
- State-of-the-art mass determination of28Si spheres for the Avogadro projectMetrologia, 2011
- Surface layer determination for the Si spheres of the Avogadro projectMetrologia, 2011
- Molar mass of silicon highly enriched in28Si determined by IDMSMetrologia, 2011
- Counting the atoms in a28Si crystal for a new kilogram definitionMetrologia, 2011
- Redefinition of the kilogram and the impact on its future disseminationMetrologia, 2010
- Ultra‐thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on SiSurface and Interface Analysis, 2009
- Reference-free X-ray spectrometry based on metrology using synchrotron radiationJournal of Analytical Atomic Spectrometry, 2008
- Improved accuracy of quantitative XPS analysis using predetermined spectrometer transmission functions with UNIFIT 2004Surface and Interface Analysis, 2005
- Determination of the amount of gas adsorption on SiO2/Si(100) surfaces to realize precise mass measurementMetrologia, 2004
- Calculations of electron inelastic mean free paths (IMFPS). IV. Evaluation of calculated IMFPs and of the predictive IMFP formula TPP‐2 for electron energies between 50 and 2000 eVSurface and Interface Analysis, 1993