Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions
- 1 January 2021
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (1), 018001
- https://doi.org/10.35848/1347-4065/abd04f
Abstract
Reported experimental results on homoepitaxial 4H-SiC grown by chemical vapor deposition on 1 degrees- and 4 degrees-off (0001) surfaces under silicon-rich conditions in a SiH4-C3H8-N-2-H-2 system are quantitatively analyzed according to surface diffusion theory dealing with step dynamics. The surface-diffusion lengths of carbon- and nitrogen-containing molecules are, respectively, estimated to be lambda(C) = 25 nm and lambda(N) >= lambda(C) at 1773 K. This magnitude relationship agrees with the reported assumption made for the variation in nitrogen concentration on (000 (1) over bar) facets of 4H-SiC grown by physical vapor transport. (c) 2020 The Japan Society of Applied PhysicsKeywords
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