MBE Growth of GaAs1-xSbx and InyGa1-yAs and Application of BCF Theory to Study the Alloy Composition
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9R)
- https://doi.org/10.1143/jjap.27.1585
Abstract
The solid composition of GaAs1-x Sb x and In y Ga1-y As grown on a stepped surface by molecular beam epitaxy is discussed. The experimental results show that the concentration of Sb or In in the epitaxial layer decreases rapidly with the growth temperature and that Sb becomes lower and In higher in concentration with increasing off-angle from the (100) surface. In order to explain these phenomena, the BCF theory is successfully applied.Keywords
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