Design of AlGaN-based quantum structures for low threshold UVC lasers
- 9 December 2019
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 126 (22), 223101
- https://doi.org/10.1063/1.5125256
Abstract
The influence of the polarization field on the emission properties of the AlGaN-based quantum structures grown on AlN substrates was investigated as a function of well width, barrier width, and barrier height. A thin AlGaN well and a thin AlN barrier design reduced the polarization field to ∼0.5 MV/cm, resulting in an ultralow laser threshold of 3 kW/cm2 in an optically pumped configuration. These experimental results were used to validate the simulation. In the next step, a structure with Al0.7Ga0.3N barriers was designed to support carrier injection with a minimal loss in optical performance. This structure showed a threshold of 7 kW/cm2 under optical pumping and an estimated threshold current of 8 kA/cm2 for the electric injection.Keywords
Funding Information
- National Science Foundation (ECCS-1508854)
- National Science Foundation (ECCS-1610992)
- National Science Foundation (ECCS-1653383)
- National Science Foundation (ECCS-1916800)
- Air Force Office of Scientific Research (FA9550-17-1-0225)
- Army Research Office (W911NF-15-2-0068)
- Army Research Office (W911NF-16-C-0101)
- Army Research Office (W911NF-18-1-0415)
- Army Research Office (W911NF-14-C-0008)
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