InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy
- 15 June 1998
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 189-190, 826-830
- https://doi.org/10.1016/s0022-0248(98)00303-0
Abstract
No abstract availableKeywords
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