Excitonic Photoluminescence in Semiconductor Quantum Wells: Plasma versus Excitons
- 13 February 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (6), 067402
- https://doi.org/10.1103/physrevlett.92.067402
Abstract
Time-resolved photoluminescence spectra after nonresonant excitation show a distinct resonance, independent of the existence of bound excitons. A microscopic analysis identifies exciton and electron-hole plasma contributions. For low temperatures and low densities, the excitonic emission is extremely sensitive to details of the electron-hole-pair population making it possible to identify even minute fractions of optically active excitons.
Keywords
This publication has 20 references indexed in Scilit:
- Influence of Coulomb and phonon interaction on the exciton formation dynamics in semiconductor heterostructuresPhysical Review B, 2003
- Exciton Formation in Semiconductors and the Influence of a Photonic EnvironmentPhysical Review Letters, 2001
- Microscopic Theory of Excitonic Signatures in Semiconductor PhotoluminescencePhysical Review Letters, 1998
- Effect of exciton-carrier thermodynamics on the GaAs quantum well photoluminescencePhysical Review B, 1996
- Nonequilibrium dynamics of free quantum-well excitons in time-resolved photoluminescencePhysical Review B, 1996
- Selective exciton formation in thin GaAs/As quantum wellsPhysical Review Letters, 1993
- Influence of exciton localization on recombination line shapes:As/GaAs quantum wells as a modelPhysical Review B, 1992
- Enhanced radiative recombination of free excitons in GaAs quantum wellsPhysical Review Letters, 1991
- Exciton dynamics in a GaAs quantum wellPhysical Review B, 1991
- Reduced dimensionality of hot-carrier relaxation in GaAs quantum wellsPhysical Review B, 1988