Molecular beam epitaxy of GaAs and AlGaAs on Si
- 1 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5), 535-536
- https://doi.org/10.1063/1.95305
Abstract
Epitaxial layers of GaAs and AlxGa1−x As (0.2≤x≤0.5) have been grown directly on single‐crystal Si (100) substrates, without an intermediate Ge layer, by molecular beam epitaxy (MBE). To improve nucleation, after being chemically cleaned the Si substrates were preheated in the MBE system to reduce surface contamination and achieve ordered surface reconstruction prior to growth. Reflection electron diffraction, Rutherford backscattering channeling, and photoluminescence measurement were used to characterize the epitaxial layers. The AlGaAs layers were found to be superior to the GaAs layers.Keywords
This publication has 2 references indexed in Scilit:
- GaAs Shallow-homojunction solar cells on Ge-coated Si substratesIEEE Electron Device Letters, 1981
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981