Ka-band 2.3W power AlGaN/GaN heterojunction FET
- 26 June 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Describes the first successful watt-level Ka-band power operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. Taking the advantage of high breakdown voltage, high-current, and high-gain characteristics of the short-channel GaN-based FET, state-of-the-art high-power performance of >2W has been achieved at 30GHz from a single chip having a gate width of 0.36mm. The developed device with a gate length of 0.25/spl mu/m exhibited a linear gain of 8.8dB at 30GHz, indicating that the short-channel AlGaN/GaN FET is promising for a variety of high-power applications at Ka-band and above.Keywords
This publication has 2 references indexed in Scilit:
- A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaN/AlGaN high electron mobility transistors with f of 110 GHzElectronics Letters, 2000