A Theoretical Investigation of the Residual Voltage on Electrophotographic Plates

Abstract

A numerical analysis of the residual voltage on an electrophotographic plate is presented for a photodischarge process characterized by carrier trapping and release parameters. The physical model is described by a set of one-dimensional transport equations with appropriate initial and boundary conditions. Examples of calculations are given for two models involving one and two hole trap levels. It is shown that a residual voltage can be derived which is valid for the decay process in amorphous Se film under typical electrophotographic conditions. For one trapping level, a trapping parameter of w10^-5 are needed to decrease the residual voltage V _r. With two trapping levels, the residual voltage is mainly influenced by the deep trap E _t1.