InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
- 13 March 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (11), 113505
- https://doi.org/10.1063/1.2185622
Abstract
GaN -based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN -based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60% at 20 mA . It is worth noting that the typical 20 mA driven forward voltage is only 0.15 V higher than that of conventional LEDs (LEDs with specular surface).Keywords
This publication has 13 references indexed in Scilit:
- In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layerSolid-State Electronics, 2003
- High brightness ingan green leds with an ito on n/sup ++/ -sps upper contactIEEE Transactions on Electron Devices, 2003
- InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature rampingJournal of Electronic Materials, 2003
- Growth of self-assembled GaN quantum dots via the vapor–liquid–solid mechanismApplied Physics Letters, 2002
- GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlNApplied Physics Letters, 2002
- High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 2002
- Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layerIEEE Electron Device Letters, 2001
- High-Density Plasma-Induced Etch Damage of GaNMRS Proceedings, 1999
- Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formationPhysical Review Letters, 1993
- Surfactants in epitaxial growthPhysical Review Letters, 1989