Au–Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3R), 379-380
- https://doi.org/10.1143/jjap.23.379
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An improved AuGe ohmic contact to n-GaAsSolid-State Electronics, 1982
- The effects of contact size and non-zero metal resistance on the determination of specific contact resistanceSolid-State Electronics, 1982
- Microstructure and Resistivity of Laser‐Annealed Au‐Ge Ohmic Contacts on GaAsJournal of the Electrochemical Society, 1981
- Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic PropertiesJapanese Journal of Applied Physics, 1975