Radiation-induced defect centers in 4H silicon carbide
- 1 August 1997
- journal article
- Published by Elsevier BV in Diamond and Related Materials
- Vol. 6 (10), 1333-1337
- https://doi.org/10.1016/s0925-9635(97)00108-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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