Characteristics of Thermal Annealing of Radiation Damage in MOSFET's
- 1 April 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (5), 2417-2424
- https://doi.org/10.1063/1.1656570
Abstract
The thermal annealing characteristics of radiation damage in p‐channel MOSFETS due to irradiation by 1.5 MeV electrons as a function of time and temperature are presented. Both isothermal and isochronal annealing curves are analyzed and it is found that the activation energy of the annealing processes has a distribution in a range of 1 eV with the peak at about 1 eV. The mechanism of radiation damage and the model of thermal annealing in the MOSFETS are discussed.Keywords
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