Synchrotron-radiation-induced surface nitridation of silicon at room temperature
- 2 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (9), 533-534
- https://doi.org/10.1063/1.98150
Abstract
We demonstrate that unmonochromatized synchrotron radiation stimulates the formation of surface-reacted nitride species on silicon at room temperature. The experimental evidence was obtained by exposing a NH3-covered Si(111) surface to synchrotron radiation. This class of phenomena is relevant for the manufacturing technology of submicron electronic devices.Keywords
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