Effect of higher absorption in non-lasing GaAs diodes at 300°K
- 1 April 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 2 (4), 74-76
- https://doi.org/10.1109/jqe.1966.1073991
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Internal Quantum Efficiency of GaAs Electroluminescent DiodesJournal of Applied Physics, 1965
- Spectral distribution of room temperature GaAs-junction luminescence as a function of base thicknessProceedings of the IEEE, 1965
- Threshold dependency on reabsorption loss in injection lasersIEEE Journal of Quantum Electronics, 1965
- Improving the External Efficiency of Electroluminescent DiodesJournal of Applied Physics, 1965
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Temperature dependency of incoherent and coherent radiation in GaAs diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1964