Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAs
- 1 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11), 4563-4570
- https://doi.org/10.1063/1.339051
Abstract
The theory underlying the steady-state photocarrier grating technique is presented, including the effect of surface recombination. Experimental results for amorphous hydrogenated silicon and semi-insulating GaAs prove that diffusion lengths ranging from 200 Å to 10 μm can be measured with an accuracy of better than 5%.Keywords
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