By applying special thick film photolithography it is possible to realize a highly automative ion‐sensitive field effect transistor (ISFET) packaging at the wafer level. In this paper two approaches based on photolithographic processing of encapsulating layers are presented. A lift‐off method of commercial thermocurable encapsulants has been investigated, as well as direct photopolymerization of ultraviolet‐curable encapsulant compositions, containing either epoxy acrylate or polyurethane acrylate oligomers together with monomers and photoinitiators. Lift‐off has been developed using either thin or thick photoresist sacrificial layers. The best compatibility implies thick photosensitive polyimide layers as a sacrificial photoresist together with the encapsulant material based on alumina‐filled epoxy. However, better results are obtained by using photopatternable encapsulant polymers that permit application of thin or thick polymer layers on a wafer substrate containing ISFET chips. Windows over the gate region and contact pads are opened by exposure to ultraviolet light in a standard mask aligner system. Compositions based on epoxy acrylate oligomers are proved to be more reliable in a packaging process. Lifetime of encapsulated microsensors for pH measurements is presented.