The 0.93 and 1.02 eV luminescence in p-GaAs
- 16 March 1970
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 1 (3), K109-K112
- https://doi.org/10.1002/pssa.19700010330
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Recombination and Trapping Processes at Deep Centers in N-Type GaAsJapanese Journal of Applied Physics, 1967