Transient Simulation of Silicon Devices and Circuits
- 1 October 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 4 (4), 436-451
- https://doi.org/10.1109/tcad.1985.1270142
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Variation Diminishing Splines in SimulationSIAM Journal on Scientific and Statistical Computing, 1986
- Semiconductor device simulationIEEE Transactions on Electron Devices, 1983
- Yale sparse matrix package I: The symmetric codesInternational Journal for Numerical Methods in Engineering, 1982
- Physics and simulation of small MOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Global approximate Newton methodsNumerische Mathematik, 1981
- A survey of third-generation simulation techniquesProceedings of the IEEE, 1981
- Yale Sparse Matrix Package. II. The Nonsymmetric CodesPublished by Defense Technical Information Center (DTIC) ,1977
- CONSIDERATIONS IN THE DESIGN OF SOFTWARE FOR SPARSE GAUSSIAN ELIMINATION**This research was supported in part by NSF Grant GJ-43157 and ONR Grant N0014-67-A-0097-0016.Published by Elsevier BV ,1976
- Simultaneous Numerical Solution of Differential-Algebraic EquationsIEEE Transactions on Circuit Theory, 1971
- The transient response of insulated-gate field-effect transistorsSolid-State Electronics, 1965