Schottky diodes and other devices on thin silicon membranes

Abstract

The fabrication of ultra-thin silicon membranes of micron or submicron sizes with thicker supporting frames makes possible improvements in several kinds of electronic devices. We show that the series resistances of some devices can be reduced significantly, thus effecting increases in the cutoff frequencies. The resistance swing of Schottky diodes can also be raised. Initial experimentation relating to some of these applications is presented.