Two-carrier space-charge-limited current in GaP
- 30 June 1964
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 7 (6), 473-479
- https://doi.org/10.1016/0038-1101(64)90045-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963
- Electroluminescent devices using carrier injection in gallium phosphideSolid-State Electronics, 1963
- Light emission from forward biased p-n junctions in gallium phosphideSolid-State Electronics, 1962
- Phonon-Assisted Tunneling in Silicon and Germanium Esaki JunctionsPhysical Review B, 1962
- Space-Charge-Limited Currents in Organic CrystalsJournal of Applied Physics, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Space-Charge Currents in Gallium ArsenideNature, 1961
- Direct Observation of Polarons and Phonons During Tunneling in Group 3-5 Semiconductor JunctionsPhysical Review Letters, 1960
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953