Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
- 1 April 2009
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 48 (4S), 04C083
- https://doi.org/10.1143/jjap.48.04c083
Abstract
No abstract availableKeywords
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