Luminescence of multiple modulation-doped GaAs-AlxGa1−xAs heterojunctions in high magnetic fields

Abstract

The luminescence of wide-modulation (500 Å) n-doped multiple quantum wells under high magnetic fields (up to 23) shows the recombination of the electrons and the holes in the lowest Landau level of the three electronic subbands occupied. The luminescence intensity shows an oscillatory behavior with magnetic field corresponding to the depopulation of successive subbands. At a fixed luminescence frequency, the intensity shows a synchronical behavior with magnetoresistance oscillations when the luminescence energy corresponds to deexcitation of electrons with the the Fermi energy.