Ion implantation in TiO2: damage production and recovery, lattice site location and electrical conductivity
- 1 January 1999
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 147 (1-4), 191-201
- https://doi.org/10.1016/s0168-583x(98)00551-5
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Lattice location and electrical conductivity in Sb-implanted rutilePhysical Review B, 1997
- Channeling studies of Hf implanted into TiO2 single crystals: Lattice disorder and lattice locationMaterials Chemistry and Physics, 1994
- Recovery stages inat low temperaturesPhysical Review Letters, 1990
- Channeling Studies of Ion-Implantation Damage in Titanium DioxideMRS Proceedings, 1987
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Comparison of the photoelectric properties of the system TiO2−x with the system TiO2−xFxMaterials Research Bulletin, 1978
- Evidence of chemical effects due to implantation of 28 mev deuterons in rutileRadiation Effects, 1978
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Electron-Spin-Resonance Studies of , , , and in RutilePhysical Review B, 1973
- ``Vacuum reduction'' of rutileJournal of Applied Physics, 1973