Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy
- 1 July 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (4), 1011-1014
- https://doi.org/10.1116/1.589385
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopyApplied Physics Letters, 1995
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