Ideal MOS Curves for Silicon
- 1 September 1966
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 45 (7), 1097-1122
- https://doi.org/10.1002/j.1538-7305.1966.tb01689.x
Abstract
Ideal curves of MOS capacity and surface potential are computed for silicon with oxide thickness and doping as a parameter. High-frequency and low-frequency capacity curves are presented for the doping ranges between 1 1014 and 1 ...Keywords
This publication has 4 references indexed in Scilit:
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955