Materials and device properties of pseudomorphic In x Ga1?x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5)
- 1 August 1991
- journal article
- research article
- Published by Springer Science and Business Media LLC in Applied Physics A
- Vol. 53 (2), 109-113
- https://doi.org/10.1007/bf00323868
Abstract
No abstract availableKeywords
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