Growth of GaN by ECR-assisted MBE
Open Access
- 1 April 1993
- journal article
- Published by Elsevier BV in Physica B: Condensed Matter
- Vol. 185 (1-4), 36-49
- https://doi.org/10.1016/0921-4526(93)90213-p
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering B, 1988
- Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1987
- Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditionsJournal of Applied Physics, 1980
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Blue Anti-Stokes Electroluminescence in GaNPhysical Review Letters, 1975
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969