High thermal stability and low Gilbert damping constant of CoFeB/MgO bilayer with perpendicular magnetic anisotropy by Al capping and rapid thermal annealing
- 7 April 2014
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 104 (14), 142402
- https://doi.org/10.1063/1.4870770
Abstract
We demonstrate that the magnetic anisotropy of the CoFeB/MgO bilayer can be manipulated by adding an aluminum capping layer. After rapid thermal annealing, we can achieve large perpendicular magnetic anisotropy of CoFeB with a high thermal stability factor (Δ = 72) while the Gilbert damping constant can be reduced down to only 0.011 simultaneously. The boron and residual oxygen in the bulk CoFeB layer are properly absorbed by the Al capping layer during annealing, leading to the enhanced exchange stiffness and reduced damping. The interfacial Fe-O bonding can be optimized by tuning annealing temperature and thickness of Al, resulting in enhanced perpendicular anisotropy.Keywords
This publication has 25 references indexed in Scilit:
- Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctionApplied Physics Letters, 2012
- Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructuresApplied Physics Letters, 2012
- Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperaturesJournal of Applied Physics, 2012
- Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropyApplied Physics Letters, 2012
- Electric-field-assisted switching in magnetic tunnel junctionsNature Materials, 2011
- The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junctionApplied Physics Letters, 2011
- Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctionsApplied Physics Letters, 2011
- Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowireApplied Physics Letters, 2011
- Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctionsApplied Physics Letters, 2011
- A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctionNature Materials, 2010