Further investigation of “divacancy reaction” during Cu diffusion in GaAs
- 1 September 1964
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 2 (9), 277-280
- https://doi.org/10.1016/0038-1098(64)90325-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- Electrical effects of dislocations in high resistivity GaAsSolid-State Electronics, 1963
- Precipitates in Gallium Arsenide Single CrystalsJournal of Applied Physics, 1962
- Solubility of Oxygen in GermaniumJournal of Applied Physics, 1961
- The preparation and properties of gallium arsenide single crystalsJournal of Physics and Chemistry of Solids, 1958
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956