Copper contamination during the vapour epitaxial growth of GaAs
- 16 January 1972
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 9 (1), 259-262
- https://doi.org/10.1002/pssa.2210090130
Abstract
No abstract availableKeywords
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- Properties of p-Type GaAs Prepared by Copper DiffusionJournal of Applied Physics, 1960