Electroless copper deposition for ULSI
Open Access
- 1 June 1995
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 262 (1-2), 93-103
- https://doi.org/10.1016/0040-6090(95)05836-2
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Electroless Copper Deposition Process Using Glyoxylic Acid as a Reducing AgentJournal of the Electrochemical Society, 1994
- Selective Electroless Ni‐Cu(P) Deposition for Via Hole Filling and Conductor Pattern Cladding in VLSI Multilevel Interconnection StructuresJournal of the Electrochemical Society, 1992
- Electrochemistry of electroless platingMaterials Science and Engineering: A, 1991
- 100 nm wide copper lines made by selective electroless depositionJournal of Micromechanics and Microengineering, 1991
- On the mechanism of electroless plating. Part 3. Electroless copper alloysJournal of Applied Electrochemistry, 1990
- Side Reactions in Electroless Copper Solutions with Formaldehyde as Reducing AgentBerichte der Bunsengesellschaft für physikalische Chemie, 1989
- Mechanism of Hypophosphite‐Reduced Electroless Copper PlatingJournal of the Electrochemical Society, 1989
- Kinetic analysis of electroless deposition of copperThe Journal of Physical Chemistry, 1985
- Hydrogen Embrittlement of Electroless Copper DepositsJournal of the Electrochemical Society, 1976
- The Rate of Electroless Copper Depositionby Formaldehyde ReductionJournal of the Electrochemical Society, 1974