In-plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation-doped heterostructures
- 5 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (23), 2345-2346
- https://doi.org/10.1063/1.101121
Abstract
We have determined the strain dependence of the in‐plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation‐doped heterostructures by low‐temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations.Keywords
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