X-ray diffraction topographs of silicon crystals with superposed oxide film. I. Theory and computational procedures

Abstract

The principal aim of this paper is to develop the theoretical and computational procedures used in the following paper. The Eikonal theory of crystal diffraction is summarized, and the computational procedures for obtaining the ray trajectory and the phase change along the ray in distorted crystals are described. Specifically, the x‐ray diffraction theory is applied to the analysis of dynamical diffraction effects observed by x‐ray topography at the edge of a thin oxide film superposed on a silicon host crystal. The critical importance of symmetry properties of topographs in evaluating the computational procedures is emphasized. The present computational procedures are quite general and can be used with appropriate modifications for a quantitative understanding of diffraction effects, due to any general distortion in crystals observed in topographs of the section type.