Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- 22 April 2003
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 90 (16), 167601
- https://doi.org/10.1103/physrevlett.90.167601
Abstract
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.
Keywords
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