Growth modes of Ag deposited on Si(111) with simultaneous low energy ion bombardment
- 1 August 1989
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 218 (1), 55-74
- https://doi.org/10.1016/0039-6028(89)90620-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Surface Diffusion and Nucleation Processes in Thin Film Formation: The Case of Ag/Si(111)MRS Proceedings, 1987
- AES analysis of the growth mechanism of metal layers on metal surfacesJournal of Vacuum Science & Technology A, 1985
- Nucleation, growth and the intermediate layer in Ag/Si(100) and Ag/Si(111)Surface Science, 1984
- The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AESSurface Science, 1984
- Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status reportSurface Science, 1983
- The structural and electronic properties of cleaved silicon (111) surfaces following adsorption of silverApplications of Surface Science, 1981
- Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AESSurface Science, 1981
- The Effect of Impurity on the Formation of the √3×√3 (R30°) Surface Phase of the Ag-Si(111) SystemJapanese Journal of Applied Physics, 1981
- Direct observation of the nucleation and growth modes of Ag/Si(111)Surface Science, 1980
- Characterization of thin films on metals using proton- induced X-raysThin Solid Films, 1979