Electrical Characteristics of the RF Magnetron‐Sputtered Tantalum Pentoxide‐Silicon Interface

Abstract

Tantalum pentoxide films were deposited onto single‐crystalline silicon as gate insulators by RF magnetron sputtering. Capacitance‐voltage characteristics were measured to determine the interface properties between and Si. After annealing at 450°C in ambient, a negative interface charge that is fully localized in the low dielectric constant transition layer at the interface was observed. It has also been clarified that the rest of the film is homogeneous, whose dielectric constant is almost close to that of the bulk of . It has been shown that gate insulator with relatively good interface properties can be fabricated at low temperatures using RF magnetron sputtering.