The Characterization of N Interstitials and Dangling Bond Point Defects on Ion‐Implanted GaN Nanowires Studied by Photoluminescence and X‐Ray Absorption Spectroscopy
- 29 September 2010
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 93 (11), 3531-3534
- https://doi.org/10.1111/j.1551-2916.2010.04059.x
Abstract
No abstract availableKeywords
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