Selective area growth of high quality InP on Si (001) substrates

Abstract

In this work, we demonstrate the selective area growth of high quality InP layers in submicron trenches on exactly (001) oriented Si substrates by using a thin Gebuffer layer. Antiphase domain boundaries were avoided by annealing at the Ge surface roughening temperature to create additional atomic steps on the Gebuffer layer. The mechanism of Ge surface atomic step formation and the corresponding step density control method are illustrated. The elimination of antiphase boundaries from the optimized Gebuffer layer, together with the defect necking effect, yield defect-free top InP layers inside the trenches.