Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasers
- 15 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (8), 429-431
- https://doi.org/10.1063/1.89411
Abstract
Two types of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers have been fabricated. Room‐temperature cw operation has been achieved for junction‐defined devices emitting at 1.21 and 1.25 μm.Keywords
This publication has 3 references indexed in Scilit:
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974