Lateral-surface-superlattice and quasi-one-dimensional GaAs/GaAlAs modulation-doped field-effect transistors fabricated using x-ray and deep- ultraviolet lithography
- 1 November 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (6), 1824-1827
- https://doi.org/10.1116/1.584161