Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
- 19 September 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (12), 121113
- https://doi.org/10.1063/1.3644983
Abstract
We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 μm up to 35 °C with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic III-V/Si integration.Keywords
This publication has 16 references indexed in Scilit:
- Recent progress in lasers on siliconNature Photonics, 2010
- Technologies for thermal management of mid-IR Sb-based surface emitting lasersSemiconductor Science and Technology, 2010
- GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 $\mu$m at Room TemperatureIEEE Photonics Technology Letters, 2010
- Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy methodThin Solid Films, 2010
- Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrateApplied Physics Letters, 2009
- Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrateApplied Physics Letters, 2008
- Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materialsJournal of Crystal Growth, 2007
- Low-resistive metal/n+-InAsSb/n-GaSb contactsSemiconductor Science and Technology, 2006
- Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy studyApplied Physics Letters, 2006
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987