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Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control
Home
Publications
Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control
Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control
YO
Yusuke Ota
Yusuke Ota
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1 November 1977
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 124
(11)
,
1795-1802
https://doi.org/10.1149/1.2133158
Abstract
No abstract available
Cited by 57 articles