High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers

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Abstract
The well number of 1.3 μm GaInAsP/InP strained-layer GRINSCH quantum well lasers has been experimentally investigated in terms of the temperature dependence of the threshold current. A very high CW operating temperature of 170°C with a threshold current of 46.2 mA was obtained for an HR coated laser with eight wells.