High quantum efficiency photoemission from GaAs1−xPx alloys
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7), 314-316
- https://doi.org/10.1063/1.89405
Abstract
Photoemission from GaAs1−xPx alloys activated to negative electron affinity has been studied over the band‐gap range 1.4<Eg (eV) x<0.55). Quantum yields up to 50% (electrons/incident photon) have been measured in the visible.Keywords
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