A calculation of relaxation, migration and formation energies for surface defects in copper
- 31 October 1968
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 12 (2), 109-127
- https://doi.org/10.1016/0039-6028(68)90117-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Calculation of the vacancy migration energy in cubic crystalsJournal of Physics and Chemistry of Solids, 1968
- Vacancy relaxation in cubic crystalsJournal of Physics and Chemistry of Solids, 1967
- The relaxation energy of vacancies and impurities in a molecular latticeJournal of Physics and Chemistry of Solids, 1966
- Point-Defect Calculations for an fcc LatticePhysical Review B, 1966
- On the surface self-diffusion coefficientActa Metallurgica, 1965
- Point Defects in CopperPhysical Review B, 1962
- Penetration depth of surface effects in molecular crystalsJournal of Physics and Chemistry of Solids, 1959
- Application of the Morse Potential Function to Cubic MetalsPhysical Review B, 1959
- Calculation of Migration and Binding Energies of Mono-, Di-, and Trivacancies in Copper with the Use of a Morse FunctionPhysical Review B, 1959
- Combined Pairs of Vacancies in CopperPhysical Review B, 1953