Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement
- 21 November 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 55 (12), 3354-3359
- https://doi.org/10.1109/ted.2008.2006891
Abstract
In this paper, we present an enhancement of punchthrough voltage in AlGaN/GaN high-electron-mobility-transistor devices by increasing the electron confinement in the transistor channel using an AlGaN buffer-layer structure. An optimized electron confinement results in a scaling of punchthrough voltage with device geometry and a significantly reduced subthreshold drain leakage current. These beneficial properties are pronounced even further if gate-recess technology is applied for device fabrication. Physical-based device simulations give insight in the respective electronic mechanisms.Keywords
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